The space market has been driving towards more efficient power management solutions. Part of the drive includes the use of Gallium Nitride Field Effect Transistors (GaN FETs) for power conversion. GaN FETs have higher power conversion efficiency and have more natural immunity to radiation, due to them being wide-bandgap semiconductors. Equally important is the use of the correct driver that will allow reliable operation and maximize the benefits of the GaN FETs. Some of the key driver requirements are: a well-regulated gate drive voltage, high source/sink current capability and a split driver output stage.

Renesas' radiation hardened portfolio includes low-side GaN FET drivers to drive GaN FETs used in power systems. These drivers contain all the features necessary to reliably drive enhancement mode GaN FETs in space applications.


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