The space market has been driving towards more efficient power management solutions. Part of the drive includes the use of Gallium Nitride Field Effect Transistors (GaN FETs) for power conversion. GaN FETs have higher power conversion efficiency and have more natural immunity to radiation, due to them being wide-bandgap semiconductors. Equally important is the use of the correct driver that will allow reliable operation and maximize the benefits of the GaN FETs. Some of the key driver requirements are: a well-regulated gate drive voltage, high source/sink current capability and a split driver output stage.

Renesas' radiation hardened portfolio includes low-side GaN FET drivers to drive GaN FETs used in power systems. These drivers contain all the features necessary to reliably drive enhancement mode GaN FETs in space applications.

文档和下载

文档标题 其他语言 类型 文档格式 文件大小 日期
应用指南 &白皮书
Taking Advantage of GaN in Small Satellite “New Space” Applications 日本語 白皮书 PDF 470 KB
Advantages of Using Gallium NitrideFETs in Satellite Applications 白皮书 PDF 548 KB
AN9867: End of Life Derating: A Necessity or Overkill 应用文档 PDF 338 KB
其他
Intersil Space Products Brochure 手册 PDF 5.58 MB
Intersil Commercial Lab Services 手册 PDF 364 KB