In recent years, the space market has been driving towards more efficient power management solutions. Part of the drive includes the use of Gallium Nitride (GaN) FETs as power stages. GaN FETs have higher power conversion efficiency and have more natural immunity to radiation, due to them being wide-bandgap semiconductors. Renesas has developed a radiation hardened 100V GaN FET + integrated low-side driver to efficiently drive the GaN FETs used in these power systems. These plastic-packaged, radiation hardened GaN FET + drivers are used for DC/DC power supplies in many different mission types.


文档标题 language 类型 文档格式 文件大小 日期
AN9867: End of Life Derating: A Necessity or Overkill 应用文档 PDF 338 KB
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Intersil Space Products Brochure 手册 PDF 3.16 MB
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