概览

简介

The ISL70003ASEH is an improved version of the ISL70003SEH regulator with both tighter load regulation (<0.3% typical) and a higher output current rating of 9A. Operating over an input voltage range of 3.0V to 13.2V with integrated low rDS(ON) MOSFETs makes this monolithic solution highly efficient. Also, a tightly regulated output voltage is possible, which is externally adjustable from 0.6V to ~90% of the input voltage. Continuous output load current capability is 9A for TJ ≤ +125 °C and 6A for TJ ≤ +150 °C. The ISL70003ASEH uses voltage mode control architecture with feed-forward and switches at a selectable frequency of 500kHz or 300kHz. Loop compensation is externally adjustable to allow for an optimum balance between stability and output dynamic performance. The device features two logic-level disable inputs that can be used to inhibit pulses on the phase (LXx) pins to maximize efficiency based on the load current. The ISL70003ASEH also supports DDR applications and contains a buffer amplifier for generating the VREF voltage. High integration, best-in-class radiation performance and a feature-filled design make the ISL70003ASEH an ideal choice to power many of today’s small form-factor applications.

特性

  • Acceptance tested to 50krad(Si) (LDR) wafer-by-wafer
  • ±1% reference voltage over line, temperature, and radiation
  • Integrated MOSFETs 31mΩ PFET/21mΩ NFET; 95% peak efficiency
  • Externally adjustable loop compensation
  • Supports DDR applications (VTT tracks VDDQ/2)
  • Grounded lid eliminates charge build up
  • IMON pin for output current monitoring
  • Adjustable analog soft-start
  • Diode emulation for increased efficiency at light loads
  • 500kHz or 300kHz operating frequency
  • Monotonic start-up into prebiased load
  • Full military temperature range operation
    • TA = -55 °C to +125 °C
    • TJ = -55 °C to +150 °C
  • Radiation Acceptance (See TID Report)
    • High dose rate (50-300rad(Si)/s): 100krad(Si)
    • Low dose rate (0.01rad(Si)/s): 50krad(Si)
  • SEE hardness (See SEE report)
    • SEB and SEL LETTH: 86.4MeV•cm2/mg
    • SET at LET 86.4MeV•cm2/mg: < ±3% ΔVOUT
    • SEFI LETTH: 60MeV•cm2/mg
  • Electrically screened to DLA SMD 5962-14203

产品对比

应用

应用

  • FPGA
  • CPLD
  • DSP
  • CPU core
  • And I/O supply voltages
  • DDR memory supply voltages
  • Low-voltage
  • High-density distributed power systems

文档

设计和开发

软件与工具

软件与工具

Software title
Software type
公司
iSim:PE Offline Simulation Tool
iSim Personal Edition (iSim:PE) speeds the design cycle and reduces risk early in any project, identifying parts that can be used in current as well as next-generation designs.
Simulator 瑞萨电子
1 item

软件下载

类型 文档标题 日期
PCB设计文档 ZIP 1.07 MB
PCB设计文档 ZIP 618 KB
2 items

开发板与套件

开发板与套件

模型