概览

简介

F0453C 是一款集成式双通道射频前端,由一个射频开关和两个增益级组成,具有 6dB 增益控制功能,可用于有源天线系统(AAS)的模拟前端接收器。

F0453C 在 3500MHz 频率下提供 35dB 增益、+23dBm OIP3、+15dBm 输出 P1dB 和 1.35dB 噪声系数。 增益在单步中降低 6dB,最大增益安定时间为 31ns。 该器件采用 3.3V 单电源和 130mA IDD。

F0453C 采用 6 × 6 × 0.8 mm、32 引脚 LGA 封装,具有 50Ω 输入和输出放大器阻抗,可轻松集成到信号路径中。

特性

  • 增益(3500MHz 时)
    • 35dB(典型值,高增益模式)
    • 29dB(典型值,低增益模式)
  • 1.35dB NF(3500MHz 时)
  • +23dBm OIP3(3500MHz 时)
  • OP1dB(3500MHz 时)
    • +15dBm(高增益模式)
    • +14dBm(低增益模式)
  • 50Ω 单端输入/输出放大器阻抗
  • IDD = 130mA
  • 独立待机模式,省电
  • 电源电压:+3.15V 至 +3.45V
  • 6 × 6 mm、32 引脚 LGA 封装
  • -40°C 至 +105°C 裸露焊盘工作温度范围

产品对比

应用

文档

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设计和开发

软件与工具

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开发板与套件

开发板与套件

模型

IDT RF Product Benefits Overview

Hello, my name is Dan Terlep. I'm a Product Definer in IDT's RF group. What I'm going to talk about are some of the customer benefits of IDT's technical innovations used in RF products. These are unique innovations that differentiate our products from competitive parts. Up to 10x improvement in RF performance can be obtained when using these devices in your designs. This technology is highly desired by equipment vendors and is protected by patents.

Glitch-free technology essentially eliminates the transient overshoot that can occur during mSv attenuation state transitions of standard digital step attenuators. Flat-noise technology maintains near constant noise performance [inaudible 00:00:48] reduced in our variable gain amplifiers, thus optimizing system level signal-to-noise performance. Zero-distortion technology practically eliminates intermodulation distortion in our RF mixers and amplifiers, enhancing the system's quality of service. Kz refers to constant impedance technology, which has implemented a new line of RF switches that allows 'hot switching' in TDD systems.

Additional benefits of using IDT's RF solutions include: enable screen networks with minimal power consumption; allow scaling from macrocells to microcells using the same device with reduced voltage, reduced current, or both; improves reliability by replacing gallium arsenite with silicon; improves data throughput by optimizing signal-to-noise performance and overall dynamic range; tolerates higher operating temperature than competitive devices.

Note that IDT's RF cards are used by all major cellular 3G and 4G equipment manufacturers for systems deployed all over the world. IDT's advanced RF portfolio using these technologies includes: mixers, digital step attenuators, RF switches, variable gain amplifiers, and modulators. These are silicon monolithic devices offered in QFN packages.

In summary, IDT's RF portfolio replaces gallium arsenite parts, results in higher reliability, provides better signal-to-noise performance, faster settling times, eliminates glitching and third-order intermodulation distortion, reduces DC power consumption, and operates at higher temperatures. Thank you for your time, and please make sure to visit IDT's RF website for a more complete look at our product portfolio. For additional information and support, please use the email shown.