概览

简介

F1490 是一款高增益的两级射频放大器,可在 1.8GHz 至 6.4GHz 频率范围内工作。 F1490 采用 5V 单电源供电,提供两种可选增益模式(35.5dB 和 39.5dB)、2.5dB 噪声系数和 24dBm OP1dB(2.6GHz)。
F1490 采用 3 × 3 mm、16-VFQFPN 封装,具有匹配的 50Ω 输入和输出阻抗,可轻松集成到信号路径中。

特性

  • 射频范围:1.8GHz 至 6.4GHz
  • 35.5dB 典型增益(2.6GHz,低增益模式)
  • 高增益模式下,2.6GHz 时典型增益为 39.5dB
  • 2.6GHz 时为 2.5dB NF
  • 50Ω 单端 输入和输出阻抗
  • 5V 电源
  • 75mA 静态电流消耗
  • 1.8V 逻辑兼容待机模式,可节省功耗
  • 工作温度(TEPAD)范围:-40°C 至 +115°C
  • 3 × 3 mm 16-VFQFPN 封装

产品对比

应用

文档

类型 文档标题 日期
数据手册 PDF 4.06 MB
指南 PDF 2.24 MB
产品简述 PDF 983 KB
产品简述 PDF 506 KB
产品变更通告 PDF 101 KB
产品变更通告 PDF 5.71 MB
报告 PDF 451 KB
7 items

设计和开发

软件与工具

软件下载

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软件和工具 - 其他 S2P 195 KB
软件和工具 - 其他 S2P 194 KB
软件和工具 - 其他 RAR 4.89 MB
软件和工具 - 其他 S3P 181 KB
4 items

开发板与套件

开发板与套件

模型

IDT RF Product Benefits Overview

Hello, my name is Dan Terlep. I'm a Product Definer in IDT's RF group. What I'm going to talk about are some of the customer benefits of IDT's technical innovations used in RF products. These are unique innovations that differentiate our products from competitive parts. Up to 10x improvement in RF performance can be obtained when using these devices in your designs. This technology is highly desired by equipment vendors and is protected by patents.

Glitch-free technology essentially eliminates the transient overshoot that can occur during mSv attenuation state transitions of standard digital step attenuators. Flat-noise technology maintains near constant noise performance [inaudible 00:00:48] reduced in our variable gain amplifiers, thus optimizing system level signal-to-noise performance. Zero-distortion technology practically eliminates intermodulation distortion in our RF mixers and amplifiers, enhancing the system's quality of service. Kz refers to constant impedance technology, which has implemented a new line of RF switches that allows 'hot switching' in TDD systems.

Additional benefits of using IDT's RF solutions include: enable screen networks with minimal power consumption; allow scaling from macrocells to microcells using the same device with reduced voltage, reduced current, or both; improves reliability by replacing gallium arsenite with silicon; improves data throughput by optimizing signal-to-noise performance and overall dynamic range; tolerates higher operating temperature than competitive devices.

Note that IDT's RF cards are used by all major cellular 3G and 4G equipment manufacturers for systems deployed all over the world. IDT's advanced RF portfolio using these technologies includes: mixers, digital step attenuators, RF switches, variable gain amplifiers, and modulators. These are silicon monolithic devices offered in QFN packages.

In summary, IDT's RF portfolio replaces gallium arsenite parts, results in higher reliability, provides better signal-to-noise performance, faster settling times, eliminates glitching and third-order intermodulation distortion, reduces DC power consumption, and operates at higher temperatures. Thank you for your time, and please make sure to visit IDT's RF website for a more complete look at our product portfolio. For additional information and support, please use the email shown.