概览

简介

The RJP65S06DWS 650V, 100A insulated-gate bipolar transistor (IGBT) offers high-speed switching, low collector to emitter saturation voltage, and is available in a Sawn wafer package type.

特性

  • Low collector to emitter saturation voltage VCE(sat) = 1.5V typ. (at IC = 100A, VGE = 15V, TC = 25 °C)
  • High-speed switching
  • Short circuit withstands time (10μs min.)

产品对比

应用

应用

  • Inverters

文档

设计和开发

模型