ISL6615A

High-Frequency 6A Sink Synchronous MOSFET Drivers with Protection Features

Product Status: Mass Production(*)

OVERVIEW

The ISL6615A is a high-speed MOSFET driver optimized to drive upper and lower power
N-Channel MOSFETs in a synchronous rectified buck converter topology. This driver, combined with an Intersil Digital or Analog multiphase PWM controller, forms a complete high frequency and high efficiency voltage regulator.

The ISL6615A drives both upper and lower gates over a range of 4.5V to 13.2V. This
drive-voltage provides the flexibility necessary to optimize applications involving trade-offs between gate charge and conduction losses.

The ISL6615A features 6A typical sink current for the low-side gate driver, enhancing the lower MOSFET gate hold-down capability during PHASE node rising edge, preventing power loss caused by the self turn-on of the lower MOSFET due to the high dV/dt of the switching node.

An advanced adaptive zero shoot-through protection is integrated to prevent both the upper and lower MOSFETs from conducting simultaneously and to minimize the dead-time. The ISL6615A includes an overvoltage protection feature operational before VCC exceeds its
turn-on threshold, at which the PHASE node is connected to the gate of the low side MOSFET (LGATE). The output voltage of the converter is then limited by the threshold of the low side MOSFET, which provides some protection to the load if the upper MOSFET(s) is shorted.

The ISL6615A also features an input that recognizes a high-impedance state, working together with Intersil multiphase PWM controllers to prevent negative transients on the controlled output voltage when operation is suspended. This feature eliminates the need for the Schottky diode that may be utilized in a power system to protect the load from negative output voltage damage.

KEY FEATURES

  • Dual MOSFET Drives for Synchronous Rectified Bridge
  • Advanced Adaptive Zero Shoot-Through Protection
  • Body Diode Detection
  • LGATE Detection
  • Auto-zero of rDS(ON) Conduction Offset Effect
  • Adjustable Gate Voltage for Optimal Efficiency
  • 36V Internal Bootstrap Schottky Diode
  • Bootstrap Capacitor Overcharging Prevention
  • Supports High Switching Frequency (up to 1MHz)
  • 6A LGATE Sinking Current Capability
  • Fast Rise/Fall Times and Low Propagation Delays
  • Support 5V PWM Input Logic
  • Tri-State PWM Input for Safe Output Stage Shutdown
  • Tri-State PWM Input Hysteresis for Applications with Power Sequencing Requirement
  • Pre-POR Overvoltage Protection
  • VCC Undervoltage Protection
  • Expandable Bottom Copper PAD for Better Heat Spreading
  • Dual Flat No-Lead (DFN) Package
  • Near Chip-Scale Package Footprint; Improves PCB Efficiency and Thinner in Profile
  • Pb-free (RoHS compliant)

BLOCK DIAGRAM

 Block Diagram

PARAMETRICS

Parameters
ISL6615A
Basic Information
生产状态
Mass Production(*)
VIN/VPWM (最大值) (V)
15
VDRIVE (V)
4.5 to 13.2
每个驱动器UGATE拉电流|灌电流的输出 (A)
2.5|4
每个驱动器LGATE拉电流|灌电流的输出 (A)
4|6
相位电压最小值 (V)
GND - 0.3VDC GND - 8V (<400ns)
相位电压最大值 (V)
15VDC, 30V (<200ns)
无负载IS (最大值) (mA)
4.5
IS
8 mA
资质级别
Standard
CAN 采样
YES
温度范围
-40 to +85

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