HIP2211

100V, 3A Source, 4A Sink, High Frequency Half-Bridge Drivers with HI/LI Input and Adjustable Dead Time

Product Status: Mass Production

OVERVIEW

The HIP2211 is a 100V, 3A source, 4A sink high-frequency half-bridge NMOS FET driver. The HIP2211 features standard HI/LI inputs and is pin-compatible with popular Renesas bridge drivers such as the HIP2101 and ISL2111. Its wide operating supply range of 6V to 18V and integrated high-side bootstrap diode supports driving the high-side and low-side NMOS in 100V half-bridge applications.

This driver features a strong 3A source, 4A sink driver with very fast 15ns typical propagation delay and 2ns typical delay matching, making it optimal for high-frequency switching applications. VDD and boot UVLO protects against an undervoltage operation.

The HIP2211 is offered in 8 Ld SOIC, 8 Ld 4x4mm DFN, and 10 Ld 4x4mm TDFN packages.

KEY FEATURES

  • Drop-in replacement for the ISL2111 and HIP2101 8 Ld SOIC, 8 Ld DFN, and 10 Ld TDFN packages
  • 115VDC bootstrap supply maximum voltage supports 100V on the half-bridge
  • 3A source and 4A sink gate drivers for NMOS FETs
  • Fast propagation delay and matching: 15ns typical delay; 2ns typical matching
  • Integrated 0.5Ω typical bootstrap diode
  • Wide 6V to 18V operating voltage range
  • VDD and boot Undervoltage Lockout (UVLO)
  • Robust noise tolerance: wide hysteresis at inputs; HS pin tolerates up to -10V continuous
  • HI/LI inputs 3.3V logic compatible with VDD voltage tolerance
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    APPLICATIONS

  • Telecom half-bridge and full-bridge DC/DC converters
  • 3-phase BLDC motor driver; H-Bridge motor driver
  • Two-switch forward and active clamp converters
  • Multiphase PWM DC/DC controllers
  • Class-D amplifiers

BLOCK DIAGRAM

 Block Diagram

PARAMETRICS

Parameters
HIP2211
Basic Information
生产状态
Mass Production
iSim模型
YES
最大自举电源电压 (V)
115
VBIAS (最大值) (V)
18
峰值上拉电流
3 A
峰值下拉电流
4 A
导通传播延迟 (ns)
15
关断传播延迟 (ns)
15
上升时间
20 ns
下降时间
20 ns
输入逻辑电平
3.3V/TTL
电荷泵
No
资质级别
Standard
采样
YES
温度范围
-40 to +125

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