The μPA2690T1R is Dual N- and P-channel MOS Field Effect Transistors for switching application.
This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.
- N-channel 2.5V, P-channel 1.8V drive available
- Low on-state resistance
RDS(on)1 = 42 mΩ MAX. (VGS = 4.5 V, ID = 2.0 A)
RDS(on)2 = 62 mΩ MAX. (VGS = 2.5 V, ID = 2.0 A)
RDS(on)1 = 79 mΩ MAX. (VGS = –4.5 V, ID = –1.5 A)
RDS(on)2 = 105 mΩ MAX. (VGS = –2.5 V, ID = –1.5 A)
RDS(on)3 = 182 mΩ MAX. (VGS = –1.8 V, ID = –1.5 A)
- Built-in gate protection diode
- Lead-free and Halogen-free
You can find an explanation of orderable part numbers here.
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