N0601N

Nch Single Power MOSFET 60V 100A 4.2mohm TO-263

Support for high-efficiency drive and low heat design

OVERVIEW

The N0601N is N-channel MOS Field Effect Transistor designed for high current switching applications.

KEY FEATURES

    • Low on-state resistance
      RDS(on) = 4.2 mΩ MAX. (VGS = 10 V, ID = 50 A)
    • Low input capacitance
      Ciss = 7730 pF TYP. (VDS = 25 V, VGS = 0 V)
    • High current
      ID(DC) = ±100 A
    • RoHS Compliant

PARAMETRICS

Parameters
N0601N
Basic Information
生产状态
Mass Production
PLP
-
封装类型
TO-263
Nch/Pch
Nch
通道数
Single
VDSS (V) 最大值
60
ID (A)
100
RDS (ON) (mΩ) 最大值@10V或8V
4.2
Ciss (pF) 典型值
7730
Vgs (off) (V) 最大值
4
VGSS (V)
20
Pch (W)
156
应用
Industrial, Consumer Use
安装类型
Surface Mount
系列名称
N0 Series
QG (nC) 典型值
133

You can find an explanation of orderable part numbers here.

 

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