The RJP65T43DPM 650V, 40A trench insulated-gate bipolar transistor (IGBT) features a 150A collector peak current, offers through hole mounting, and comes in a TO-3PFM package.
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Pkg. Type |
Carrier Type |
购买 / 样片 |
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器件号 | |||
TO-3PFM | Tube | 获取样片, |