RMHE41A364AGBG-120

Low Latency DRAM is our newest large-density memory boasting high performance. Incorporating high-performance technology used in our synchronous SRAM and the pseudo-SRAM technology used in mobile-specified RAM, Low Latency DRAM is ideal for use in various networking applications. With a Fast random access time-and data latency lower than other DRAM products-Low Latency DRAM realizes extremely high performance compared to commodity DRAM. Those features, combined with large density and lower cost per bit compared to SRAM solutions make Low Latency DRAM an attractive choice for use in next-generation, high-performance networking products.

Product Status: Mass Production

PARAMETRICS

Parameters
RMHE41A364AGBG-120
Basic Information
明星产品
-
供电电压 (V)
1.5
密度 (MB)
1100
架构
Low Latency DRAM-III
功能
Common I/O
突发长度 (字)
4
数据宽度 (位)
36
最大频率 (MHz)
800
最小频率 (MHz)
400
tRC (ns)
13.75
工作温度 (degC)
Tc=-0 to 95
I/O电压 (V)
1.0/1.2
生产状态
Mass Production

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