Low Latency DRAM (dynamic random-access memory) is Renesas' large-density memory boasting high performance. Incorporating high-performance technology used in our synchronous SRAM and the pseudo-SRAM technology used in mobile-specified RAM, Low Latency DRAM is ideal for use in various networking applications. With a fast random access time-and data latency lower than other DRAM products-Low Latency DRAM realizes extremely high performance compared to commodity DRAM. Those features, combined with large density and lower cost per bit compared to SRAM solutions make Low Latency DRAM an attractive choice for use in next-generation, high-performance networking products.

Features

  • Large capacity and high-speed access
  • Double-data-rate architecture
  • Common I/O
  • PLL circuitry
  • Specifications for various network markets

Low Latency High Bandwidth Memory

Renesas’ low latency high bandwidth memory consists of multiple Renesas original low latency memory dies and realizes high random access rate and small data granularity as well as high bandwidth. By populating the stack memory along with your accelerator or processor in the same package, you can differentiate your systems with its performance improvement by keeping effective bandwidth high even at non-sequential memory access. The stack memory accelerates datacenter applications such as artificial intelligence (deep learning, convolutional neural network, etc.), graph analytics, database, and sparse matrix. It also fits network applications such as table lookup with high search rate, packet buffer, control memory in routers, switches etc.

Features

  • Stacked Memory: The stack memory is integrated with a customer’s ASIC, GPU, CPU, NPU, FPGA, AI accelerator on a silicon interposer in the same package.
  • High Random Access Rate and Small Data Granularity: 16 billion random access per second and 16-Byte data granularity realize high effective bandwidth regardless of applications.
  • Guarantees Tjmax = 115 °C: Renesas’ Low Latency DRAM products have a long history to meet severe high maximum temperature requirements with long life from network industry customers. The new stack memory also guarantees Tjmax = 115 °C and delivers realistic solutions to your package thermal problem.
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LLDRAM Access Rate
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LLDRAM Data Granularity

Lineup/Specifications

Density (Gb) Config. Burst Length Clock Freq. (MHz) Data Width tRC (ns) Access Rate (Maps) Bandwidth (Gbps) Data Granularity VDDQ (I/O) (V) Status
9Gb/18Gb 1 2 1,000 x 1,152 12.0 16,000 2,304 16 Bytes 1.0 9Gb Sampling
1.2
2 4 1,000 x 1,152 16.0 8,000 2,304 32 Bytes 1.0 9Gb Sampling
1.2

Related Documents

Contact Us

For additional information, send an email inquiry to LowLatencyHBM@lm.renesas.com

文档和下载

文档标题 其他语言 类型 文档格式 文件大小 日期
数据手册与勘误表
Low Latency High Bandwidth Memory Datasheet (Digest Edition) 数据手册 PDF 678 KB
使用指南与说明
SRAM Part Number Guide 日本語 指南 PDF 199 KB
应用指南 &白皮书
Low Latency High Bandwidth Memory Application Note 应用文档 PDF 551 KB
其他
Network Packet Search Solution Catalog 手册 PDF 1.79 MB