RJE0603JPE

Silicon P Channel MOS FET Series Power Switching

Pin compatible with standard Power MOSFET package and built-in over temperature protection function for Body/Lighting/Heater applications, as well as powertrain applications and 24V battery system applications.

Product Status: Mass Production

OVERVIEW

This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc..

KEY FEATURES

    • High endurance capability against to the short circuit.
    • Built-in the over temperature shut-down circuit.
    • Latch type shut down operation (need 0 voltage recovery).
    • Built-in the current limitation circuit.

PARAMETRICS

Parameters
RJE0603JPE
Basic Information
Nch/Pch
Pch
通道数
Single
汽车业
YES
VDSS (V)
-60
ID (A)
-50
RDS (ON) (mΩ) 最大值@4V至4.5V
30
RDS (ON) (Ω) 典型值@4V至4.5V
16
RDS (ON) (mΩ) 最大值@8V至10V
15
RDS (ON) (Ω) 典型值@8V至10V
12
Pch (W)
100
Tsd (°C) 典型值
175
封装类型
LDPAK(S)(1)
生产状态
Mass Production

Outline

Dimensions

Below you will find information to support the development of your application.
You can find an explanation of orderable part numbers here.

 

Resources for Software and Hardware

Title Description
My Renesas Create a My Renesas account to use our tool download services, receive e-newsletter/update notifications, and take advantage of our other services.
e-learning Information for studying and learning about microcontrollers and microprocessors.
FAQ Frequently asked questions and useful hints for development.
Forum A forum and community site to share technical information, questions and opinions with others who use Renesas products.
Video Watch videos related to this product.