IDT’s product portfolio addresses customer requirements for size, efficiency and performance in practical massive MIMO arrays.

2019年2月28日

SAN JOSE, Calif., February 28, 2019 – Integrated Device Technology, Inc. (IDT) (NASDAQ: IDTI) is expanding its leadership position in the growing market for Active Antenna Systems (AAS), which are critical for the massive MIMO-based cellular base stations that carriers worldwide are using to deliver 4G and 5G services. IDT® AAS solutions include interface amplifiers, low noise amplifiers, switches and pre-drivers to address the high performance transmit and receive requirements of massive MIMO with the highest efficiencies in the smallest form factors.

This product portfolio offers telecom equipment manufacturers several advantages, including the ability to optimize performance for their unique operating condition requirements, such as linearity versus current consumption. Complementing this, the devices also deliver stability over a wide range of environmental conditions and frequency bandwidths. IDT’s Smart Silicon™ integration allows for small form factors for a given board function, a critical advantage for the large number of antenna paths required by each system.

“Our growing portfolio of products for the Active Antenna Systems that power the world’s existing 4G and upcoming 5G mobile networks address critical requirements in both the transmit and receive chains including the amplification, gain control and protection needed for the multiple elements in such systems,” said Duncan Pilgrim, vice president and general manager of IDT’s RF division. “These products are the first of several generations that will migrate from discrete components to sub-systems with the intelligence to dynamically optimize performance based on signal and environmental conditions.”

The AAS portfolio includes the recently released IDT F0424 high-gain broadband amplifier, an ideal solution for macro base stations, massive MIMO, repeaters, small cell and test equipment.

The F0424 is complemented by the following devices which are sampling now:

  • F0453B – a highly integrated and high performance dual path 3.5GHz RF switch with low-noise amplifier (LNA) and gain control that addresses the requirements of next-generation systems 
  • F0452B – a dual path 2.6GHz RF switch with low-noise amplifier (LNA) and gain control that is highly integrated and has the high performance that next-generation systems require
  • F1478 – a high gain pre-driver that covers all key sub-6GHz frequency bands and power modes with stable operation
  • F1129 – a differential high-gain receive amplifier with flat wideband response in a compact form factor that requires minimal external BOM components for operation
  • F1429 – a compact differential high-gain transmit amplifier with flat wideband response and which requires minimal BOM components for operation

More information about the AAS solutions is available at idt.com/aas.

About IDT

Integrated Device Technology, Inc. develops system-level solutions that optimize its customers’ applications. IDT’s market-leading products in RF, high performance timing, memory interface, real-time interconnect, optical interconnect, wireless power and smart sensors are among the company’s broad array of complete mixed-signal solutions for the communications, computing, consumer, automotive and industrial segments. Headquartered in San Jose, Calif., IDT has design, manufacturing, sales facilities and distribution partners throughout the world. IDT stock is traded on the NASDAQ Global Select Stock Market® under the symbol “IDTI.” Additional information about IDT can be found at www.IDT.com. Follow IDT on Facebook, LinkedIn, Twitter, and YouTube.

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