The R1RW0416D is a 4-Mbit High-Speed static RAM organized 256-kword × 16-bit. It has realized High-Speed access time by employing CMOS process (6-transistor memory cell) and High-Speed circuit designing technology. It is most appropriate for the application which requires High-Speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. Especially, LVersion and S-Version are low power consumption and it is the best for the battery backup system. The package prepares 400-mil 44-pin SOJ and 400-mil 44-pin plastic TSOPII for high density surface mounting.


  • Single 3.3 V supply: 3.3 V ± 0.3 V
  • Access time: 10 ns / 12 ns (max)
  • Completely static memory No clock or timing strobe required
  • Equal access and cycle times
  • Directly TTL compatible All inputs and outputs
  • Operating current: 145 / 130mA (max)
  • TTL standby current: 40 mA (max)
  • CMOS standby current : 5 mA (max) : 0.8 mA (max) (L-version) : 0.5 mA (max) (S-version)
  • Data retention current : 0.4 mA (max) (L-version) :0.2 mA (max) (S-version)
  • Data retention voltage: 2.0 V (min) (L-version , S-version)
  • Center VCC and VSS type pin out


製品名 PLP Part Status Pkg. Type Carrier Type 購入/サンプル
2030 3月 Active TSOP(2) Tray
2030 3月 Active TSOP(2) Embossed Tape


タイトル language 分類 形式 サイズ 日付
R1RW0416Dシリーズ データシート English データシート PDF 652 KB
半導体製品 包装材変更のお願い(一部内容の追加及び修正) English 製品変更通知 PDF 4.87 MB
半導体製品 包装材変更のお願い ( PC-WRP-A001B/J ) English 製品変更通知 PDF 3.82 MB
半導体製品 包装材変更のお願い ( PC-WRP-A001A/J ) English 製品変更通知 PDF 1.91 MB
Package Drawing TSOP(2) 44pin PTSB0044GG-A パッケージ外形図 PDF 79 KB
Renesas Semiconductor Lead-Free Packages カタログ PDF 1.32 MB