The ISL71040M is a low-side driver designed to drive enhancement mode Gallium Nitride (GaN) FETs in isolated topologies and boost type configurations. The ISL71040M operates with a supply voltage from 4. 5V to 13. 2V and has both inverting (INB) and non-inverting (IN) inputs to satisfy requirements for inverting and non-inverting gate drives with a single device. The ISL71040M has a 4. 5V gate drive voltage (VDRV) generated using an internal regulator that prevents the gate voltage from exceeding the maximum gate-source rating of enhancement mode GaN FETs. The gate drive voltage features an Undervoltage Lockout (UVLO) protection that ignores the inputs (IN/INB) and keeps OUTL turned on to ensure the GaN FET is in an OFF state whenever VDRV is below the UVLO threshold. The ISL71040M inputs can withstand voltages up to 14. 7V regardless of the VDD voltage, which allows the inputs to be connected directly to most PWM controllers. The ISL71040M's split outputs offer the flexibility to adjust the turn-on and turn-off speed independently by adding additional impedance to the turn-on and turn-off paths. The ISL71040M operates across the military temperature range from -55°C to +125°C and is offered in an 8 Ld Thin Dual Flat No-Lead (TDFN) plastic package.


  • Wide operating voltage range of 4.5V to 13.2V
  • Up to 14.7V logic inputs (regardless of VDD level) Inverting and non-inverting inputs
  • Optimized to drive enhancement mode GaN FETs
    • Internal 4.5V regulated gate drive voltage
    • Independent outputs for adjustable turn-on/turn-off speeds
  • NiPdAu-Ag Lead finish (Sn-free, Pb-free)
  • Moisture Sensitivity Level (MSL) Rating: 1
  • Passes NASA Low Outgassing Specifications
  • Full military temperature range operation
    • TA = -55°C to +125°C
    • TJ = -55°C to +150°C
  • Characterized radiation levels
    • Low Dose Rate (LDR) <0.01rad(Si)/s : 30krad(Si)
    • No SEB/L, VDD = 16.5V : 43MeV•cm2/mg


Title language Type Format File Size Date
Datasheets & Errata
star ISL71040M Datasheet Rev.1.00 Datasheet PDF 681 KB
Application Notes & White Papers
Taking Advantage of GaN in Small Satellite “New Space” Applications 日本語 White Paper PDF 470 KB
AN9867: End of Life Derating: A Necessity or Overkill Application Note PDF 338 KB
Intersil Space Products Brochure Brochure PDF 3.16 MB
ISL70040SEH, ISL73040SEH & ISL71040M Neutron Test Report Report PDF 316 KB


Title language Type Format File Size Date
ISL70040SEH Steady State iSim Model Model - Other SXSCH 104 KB
ISL70040SEH, ISL73040SEH PSPICE Model Model - SPICE ZIP 13 KB

memoryBoards & Kits

Part Number Title Type Company
ISL71040MEV1Z Radiation Tolerant Low-Side GaN FET Driver Evaluation Board Evaluation Renesas
ISL71043MEVAL1Z Radiation Tolerant Single-Ended Current Mode PWM Controller Evaluation Board Evaluation Renesas

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