Overview

Description

The RJP65T43DPM 650V, 40A trench insulated-gate bipolar transistor (IGBT) features a 150A collector peak current, offers through hole mounting, and comes in a TO-3PFM package.

Features

  • Low collector to emitter saturation voltage VCE(sat) = 1.8V typ. (at IC = 20A, VGE = 15V, Ta = 25 °C)
  • Isolated package
  • Trench gate and thin wafer technology (G7H series)
  • High-speed switching tf = 45ns typ. (at VCC = 400V, VGE = 15V , IC = 20A, Rg = 10Ω, Ta = 25 °C, Inductive load)
  • Operation frequency (20kHz ≤ f ˂ 100kHz)
  • Not guarantee short circuit withstand time

Comparison

Applications

Applications

High speed switching

Documentation

Design & Development

Models