The RJP65S07DWS 650V, 150A insulated-gate bipolar transistor (IGBT) offers high-speed switching, low collector to emitter saturation voltage, and is available in a Sawn wafer package type.
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Pkg. Type |
Carrier Type |
Moisture Sensitivity Level (MSL) |
Buy / Sample |
|
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Part Number | ||||
Sawn | 1 |