Features

  • Trench gate and thin wafer technology (G8H series)
  • Built in fast recovery diode in one package
  • Low collector to emitter saturation voltage VCE(sat) = 1.5 V typ. (at IC = 75 A, VGE = 15 V, Ta = 25°C)
  • Quality grade: Standard
  • High-Speed switching
  • Non-specification for short circuit
  • Applications: UPS, Welding, photovoltaic inverters, Power converter system

descriptionDocumentation

Title language Type Format File Size Date
Datasheets & Errata
star RBN75H65T1FPQ-A0 Datasheet Datasheet PDF 160 KB
Application Notes & White Papers
Attention of Handling Semiconductor Devices 日本語 Application Note PDF 648 KB
TO-247plus Package 日本語 Application Note PDF 506 KB
Usage Notes for Paralleled IGBT 日本語 Application Note PDF 941 KB
IGBT Application Note 日本語 Application Note PDF 1.05 MB
Other
Discrete & Power Devices Brochure Brochure PDF 1.92 MB
Analog ICs Brochure 日本語 Brochure PDF 4.20 MB
Renesas Semiconductor Lead-Free Packages Brochure PDF 1.32 MB