The NP89N04PDK is N-channel MOS Field Effect Transistors designed for high current switching applications.


  • Super low on-state resistance RDS(on) = 2.95 mΩ MAX. (VGS = 10 V, ID = 45 A)
  • Low Ciss: Ciss = 3900 pF TYP. (VDS = 25 V)
  • Logic level drive type
  • Designed for automotive application and AEC-Q101 qualified


Title language Type Format File Size Date
star NP89N04PDK40 V - 90 A - N-channel Power MOS FETApplication: Automotive Datasheet PDF 266 KB
Power Devices Part Number Guide Guide PDF 2.00 MB
Power MOS FET APPLICATION NOTE 日本語 Application Note PDF 814 KB
PowerMOSFET & IPD Brochure PDF 2.24 MB