概要

説明

The RJP65T54DPM-A0 650V, 60A trench insulated-gate bipolar transistor (IGBT) offers through hole mounting and comes in a TO-3PFP package.

特長

  • Low collector to emitter saturation voltage VCE(sat) = 1.35V typ. (at IC = 30A, VGE = 15 V, Ta = 25 °C)
  • Isolated package
  • Trench gate and thin wafer technology (G7H series)
  • High-speed switching
  • Operation frequency (50Hz ≤ f ˂ 20kHz)
  • Not guarantee short circuit withstand time

製品比較

アプリケーション

アプリケーション

  • Partial switching circuit

ドキュメント

設計・開発

モデル