Overview

Description

This product is N-channel MOS Field Effect Transistors designed for high current switching applications.

Features

  • Super low on-state resistance
    RDS(on) = 3.3 mΩ MAX. ( VGS = 10 V, ID = 45 A )
  • Low Ciss : Ciss = 3900 pF TYP. ( VDS = 25 V )

Comparison

Applications

Documentation

Type Title Date
Datasheet PDF 582 KB
End Of Life Notice PDF 1.32 MB 日本語
Application Note PDF 648 KB 日本語
3 items

Design & Development

Models