The μPA2765T1A is N-channel MOS Field Effect Transistor designed for high current switching application.
- VDSS = 30 V (TA = 25°C)
- Low on-state resistance
RDS(on) = 1.3 mΩ MAX. (VGS = 10 V, ID = 46 A)
RDS(on) = 2.9 mΩ MAX. (VGS = 4.5 V, ID = 32 A)
- 4.5 V Gate-drive available
- Thin type surface mount package with heat spreader
- Halogen free
You can find an explanation of orderable part numbers here.
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