Overview

Description

Renesas Electronics’ R1EV5801MB is an electrically erasable and programmable ROM organized as 131072-word  8-bit. It has realized High-Speed, low power consumption and high reliability by employing advanced MONOS memory technology and CMOS process and circuitry technology. It also has a 128-byte page programming function to make the write operations faster.

Features

  • Single voltage supply: 2.7 V to 5.5 V
  • Access time: 150 ns (max) at Vcc=4.5 V to 5.5 V 250 ns (max) at Vcc=2.7 V to 5.5 V
  • Power dissipation Active: 20 mW/MHz, (typ) Standby: 110 μW (max)
  • On-chip latches: address, data, CE, OE, WE
  • Automatic byte write: 10 ms (max)
  • Automatic page write (128 bytes): 10 ms (max)
  • Data polling and RDY/Busy
  • Data protection circuit on power on/off
  • Conforms to JEDEC byte-wide standard
  • Reliable CMOS with MONOS cell technology
  • 104 or more erase/write cycles
  • 10 or more years data retention
  • Software data protection
  • Write protection by RES pin
  • Temperature range: -40 to +85°C
  • There are lead free products.

Comparison

Applications

Documentation

Design & Development

Models