The NP35N04YLG is N-channel MOS Field Effect Transistor designed for high current switching applications.
- Low on-state resistance
RDS(on) = 9.7 mΩ MAX. (VGS = 10 V, ID = 17.5 A)
RDS(on) = 15 mΩ MAX. (VGS = 5 V, ID = 17.5 A)
- Logic level drive type
- Gate to Source ESD protection diode built in
- Designed for automotive application and AEC-Q101 qualified
You can find an explanation of orderable part numbers here.
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