The RAJ2930004AGM is a gate driver IC for IGBT and SiC MOSFET gate-drive in high voltage inverter applications. Integrated 3750Vrms micro-isolators provide data transfer with high voltage isolation between the primary circuit (MCU side) and the secondary circuit (IGBT side). In addition, it boasts superior CMTI (Common Mode Transient Immunity) performance at 150 V/ns or higher, providing reliable communication and increased noise immunity while meeting the high voltages and fast switching speeds required in inverter systems.
This device contains a gate drive circuit, Miller clamp circuit, and soft turn-off circuit as well as several types of protection circuits such as overcurrent detection.
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Datasheet - Short-form
|xEV Inverter Application Model & SoftwareAn xEV (Electric Vehicle) runs on a motor or combination of motor and internal combustion engine, and the motor is controlled by the xEV Inverter. The “xEV Inverter Application Model and Software” provides a sample application model and software to control the motor, reducing software development effort and time during product development using the xEV inverter kit.||Software Package||Renesas|
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Discover the reference solution to build world’s smallest 100KW class inverter for electric vehicles.
|xEV Inverter Reference Solution||A reference solution kit including software is available to help customers easily start development and reduce the total lead time.|
|RH850/C1M||High-end In-vehicle Microcomputers for HEV/EV Motor Control|