This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc. .
- Logic level operation (3 V Gate drive).
- Built-in the over temperature shut-down circuit.
- High endurance capability against to the short circuit.
- Hysteresis type shut down operation.
- High density mounting.
- Built-in the current limitation circuit.
- Power supply voltage applies 12 V and 24 V.