IDT to Present Latest RF Innovations at EDI CON USA

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Company Details Its Latest Core Innovations and Expanding Product Portfolio

13 Sep 2016

SAN JOSE, Calif., Sept. 13, 2016— Integrated Device Technology, Inc. (IDT®) (NASDAQ: IDTI) today announced it will present details on its latest core innovations and expanding portfolio of RF solutions next week at EDI CON USA. The company is focused on expanding into markets that will benefit from improved RF performance and higher levels of integration. In addition to demonstrating its products and technologies at its booth, IDT will deliver presentations on its RF innovations at the Boston, Mass., event.

The conference runs Sept. 20-22 at Boston’s Hynes Convention Center, and IDT will be located at Booth 213. IDT RF products on display will include synthesizers, mixers, amplifiers, variable gain amplifiers (VGAs), digital step attenuators (DSAs), demodulators, broadband modulators, switches, wideband voltage variable attenuators, and highly integrated solutions

IDT marketing manager Baljit Chandhoke will deliver a session titled, “RF Technical Innovations that Improve System Signal-to-Noise Ratio and Reduce Intermodulation Distortion,” at 2:20 p.m. Sept. 20 in Room 209. A day later, product manager Mark Schrepferman will give a presentation, “State-of-the-Art RF Design Technique for RF Switches to Maintain Near Constant Impedance When Switching RF Ports,” at 9 a.m. in Room 203.

“IDT continues to develop new core RF innovations and expand our portfolio of high-performance, full-featured silicon-based RF solutions supporting a broad number of markets and applications,” said Duncan Pilgrim, general manager of IDT’s RF Division. “At EDI CON USA we look forward to demonstrating how our RF portfolio is helping engineers meet the demands of current and next-generation designs.”

 

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