M16C/6N4, M16C/6N5

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Product Specifications

M16C/6N4, M16C/6N5 Group Product Specifications

Item			M16C/6N4 Group		M16C/6N5 Group
Item			Normal-ver.	T/V-ver.	Normal-ver.	T/V-ver.
CPU	Number of fundamental instructions		91 instructions
	Minimum instruction execution time		41.7 ns (f(BCLK) = 24 MHz,1/1 prescaler, without software wait)	50.0 ns (f(BCLK) = 20 MHz, 1/1 prescaler, without software wait)	41.7 ns (f(BCLK) = 24 MHz,1/1 prescaler, without software wait)	50.0 ns (f(BCLK) = 20 MHz,1/1 prescaler, without software wait)
	Operating mode		Single-chip, memory expansion, and microprocessor modes
	Address space		1 Mbyte
	Memory capacity		See Product Lineup.
Peripheral Function	Ports		Input/Output: 87 pins, Input: 1 pin
	Multifunction timers		Timer A: 16 bits ✕ 5 channels Timer B: 16 bits ✕ 6 channels Three-phase motor control circuit
	Serial interfaces		3 channels Clock synchronous, UART, I²C-bus, IEBus 1 channel Clock synchronous
	A/D converter		10-bit A/D converter: 1 circuit, 26 channels
	D/A converter		8 bits ✕ 2 channels
	DMAC		2 channels
	CRC calculation circuit		CRC-CCITT
	CAN module		2 channels with 2.0B specification		1 channel with 2.0B specification
	Watchdog timer		15 bits ✕ 1 channel (with prescaler)
	Interrupts		Internal: 31 sources, External: 9 sources Software: 4 sources, Priority levels: 7 levels		Internal: 29 sources, External: 9 sources Software: 4 sources, Priority levels: 7 levels
	Clock generation circuits		4 circuits Main clock oscillation circuit () Sub clock oscillation circuit () On-chip oscillator PLL frequency synthesizer (*) Equipped with on-chip feedback resistor
	Oscillation-stopped detector		Main clock oscillation stop and re-oscillation detection function
Electrical Characteristics	Supply voltage		VCC = 3.0 to 5.5 V (f(BCLK) = 24 MHz,1/1 prescaler, without software wait)	VCC = 4.2 to 5.5 V (f(BCLK) = 20 MHz,1/1 prescaler, without software wait)	VCC = 3.0 to 5.5 V (f(BCLK) = 24 MHz,1/1 prescaler, without software wait)	VCC = 4.2 to 5.5 V (f(BCLK) = 20 MHz,1/1 prescaler, without software wait)
	Consumption current	Mask ROM	20 mA (f(BCLK) = 24 MHz,PLL operation, no division)	18 mA (f(BCLK) = 20 MHz,PLL operation, no division)	18 mA (f(BCLK) = 24 MHz,PLL operation, no division)	16 mA (f(BCLK) = 20 MHz,PLL operation, no division)
		Flash memory	22 mA (f(BCLK) = 24 MHz,PLL operation, no division)	20 mA (f(BCLK) = 20 MHz,PLL operation, no division)	20 mA (f(BCLK) = 24 MHz,PLL operation, no division)	18 mA (f(BCLK) = 20 MHz,PLL operation, no division)
		Mask ROM Flash memory	3 μA (f(BCLK) = 32 kHz, Wait mode, Oscillation capacity Low)
		Mask ROM Flash memory	0.8 μA (Stop mode, Topr = 25 degrees C)
Flash Memory Version	Programming and erasure voltage		3.0 ± 0.3 V or 5.0 ± 0.5 V	5.0±0.5V	3.0 ± 0.3 V or 5.0 ± 0.5 V	5.0±0.5V
Flash Memory Version	Programming and erasure endurance		100 times
I/O Characteristics	I/O withstand voltage		5.0 V
I/O Characteristics	Output current		5 ｍA
Operating Ambient Temperature			-40 degrees C to 85 degrees C	T version: -40 to 85 degrees C V version: -40 to 125 degrees C (option)(1)	-40 degrees C to 85 degrees C	T version: -40 to 85 degrees C V version: -40 to 125 degrees C (option)(1)
Device Configuration CMOS high			CMOS high-performance silicon gate
Package			100-pin molded-plastic QFP, LQFP

Note:

option: All options are on request basis.