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The following page content corresponds to the products marketed in Japan.
If you do not live in Japan, please

Orderable Part Number Guide for Renesas Power Devices

Initial letters Page Product category Example Remarks
RJ P.1-2 Power MOSFET,
IGBT,
Fast Recovery Diode
RJK0222DNS-00-#Q5 -
RQ P.3 Power MOSFET RQA0004PXDQS#H1 -
2S P.4 HF Transistor 2SK2158A-T1B-AT JEITA name
N P.5 Power MOSFET,
Transistor
N0400P-ZK-E1-AY -
uPA P.6 Power MOSFET,
Transistor
uPA2735xGR-E1-AT -
HAF P.7 Thermal FET HAF2007-90S-TL-E -
HAT P.8 Power MOSFET,
Transistor
HAT2256R-EL-E -
H5 / H7 / H8 P.9 Power MOSFET,
Transistor
H5N5004PL-E0-E#T2 -
NP P.10 Power MOSFET NP110N04PUK-E1-AY -
F / G / H / K P.11 Transistor (BRT) FA4A3Q-T1B-A Built-in resistor
BB P.12 Transistor BB505CES-TL-E Build-in biasing circuit
TBB P.13 Transistor TBB1005EMTL-E Twin type build-in
biasing circuit
CR P.14 Thyristor CR08AS-12A-AT14#B10 -
BCR P.15 Triac BCR16PM-12LA-xA8#B00 -
RD P.16 Zener Diode RD6.8FM-T1-AY -
NNCD P.17 ESD Noise-Clipping Diode NNCD6.2LH-T1-AT -
NSAD P.18 Surge Absorber Diode NSAD500S-T1-A -
μPD166 P.19 Intelligent Power Device μPD166010T1F-E1-AY -

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