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Renesas Electronics Introduces Low-Loss, Ultra Miniature Power MOSFETs for Improved Power Efficiency, Smaller Form Factor in Portable Devices

Product Specifications of the P-Channel Power MOSFETs

Type Product Drain-
to-Source
voltage
(VDSS)
(V)
Gate-to-
Source
voltage
(VGSS)
(V)
Drain
current
(ID)(A)
On-resistance
(mΩ)
VGSS=10V VGSS=4.5V VGSS=2.5V VGSS=1.8V
typ max typ max typ max typ max
Pch-
Single
μPA2630 -12 ±8 -7.0 - - 22 27 26 35 35 56
μPA2631 -20 ±8 -6.0 - - 27 34 32 43 41 65
Pch-
Dual
μPA2672 -12 ±10 -4.0 - - 54 67 68 92 112 179
μPA2670 -20 ±10 -3.0 - - 64 79 78 105 125 199
Nch-
Single
μPA2600 20 ±12 -7.0 - - 9.3 11.6 12 16 - -
μPA2601 30 ±20 -7.0 10.5 13.2 13.6 18 - - - -
Nch-
Dual
μPA2660 20 ±12 4.0 - - 33 42 43 62 - -
Nch-
Pch
μPA2690 20 ±12 4.0 - - 33 42 43 62 - -
-20 ±10 -3.0 - - 64 79 78 105 125 199

The content in the press release, including, but not limited to, product prices and specifications, is based on the information as of the date indicated on the document, but may be subject to change without prior notice.

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