News Release
Product Specifications of the 12th-Generation Power MOSFET Products
Ta = 25℃
| Product | Max. Rating | On-Resistance (RDS (on)) (mΩ) | Qg (nC) | Qgd(nC) | |||||
|---|---|---|---|---|---|---|---|---|---|
| VDSS(V) | VGSS(V) | ID(A) | VGS = 4.5 V | VGS = 10 V | |||||
| typ. | max. | Typ. | max. | ||||||
| RJK0210DPA | 25 | +16/−12 | 40 | 5.7 | 7.4 | 4.5 | 5.4 | 11.8 | 1.2 |
| RJK0211DPA | 25 | +16/−12 | 30 | 8.7 | 11.3 | 6.8 | 8.2 | 7.5 | 0.9 |
| RJK0212DPA | 25 | +16/−12 | 25 | 12.0 | 15.6 | 9.0 | 10.8 | 5.4 | 0.6 |
- Reference Diagram
Comparison of voltage conversion efficiency between a voltage conversion circuit in which the new RJK0210DPA was used for control and one in which the RJK0365DPA-02 10th generation power MOSFET was used. (In both cases the RJK0208DPA was used as the synchronous rectifier power MOSFET.)

The content in the press release, including, but not limited to, product prices and specifications, is based on the information as of the date indicated on the document, but may be subject to change without prior notice.
Japan English


