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Renesas Electronics Introduces Seven New Power MOSFET Products with 8-Pin HSON Package for More Compact Automotive Electronic Units

Product Specifications of the New Power MOSFET Products

  • Absolute Maximum Ratings (TA = 25℃)

    Product Name Polarity Drain to Source Voltage Drain Current (DC) Total Power Dissipation (TC = 25℃) Channel to Case Thermal Resistance Channel Temperature
    NP23N06YDG Nch 60 23 60 2.5 175
    NP33N06YDG Nch 60 33 97 1.55 175
    NP35N04YUG Nch 40 35 77 1.95 175
    NP74N04YUG Nch 40 75 120 1.25 175
    NP75N04YUG Nch 40 75 138 1.09 175
    NP50P03YDG Pch −30 −50 102 1.47 175
    NP75P03YDG Pch −30 −75 138 1.09 175
    Unit - V A W ℃/W
  • Electrical Characteristics (Ta = 25℃)

    Product Name Gate to Source Threshold Voltage Drain to Source On-state Resistance (VGS = 10V) max. Drain to Source On State Resistance (VGS = 5V) max. Input Capacitance typ. Total Gate Charge typ.
    NP23N06YDG 1.4 ~ 2.5 27 37 1200 27
    NP33N06YDG 1.4 ~ 2.5 14 20 2600 52
    NP35N04YUG 2.0 ~ 4.0 10 - 1900 36
    NP74N04YUG 2.0 ~ 4.0 5.5 - 3620 64
    NP75N04YUG 2.0 ~ 4.0 4.8 - 4300 77
    NP50P03YDG −1.0 ~ −2.5 8.4 13 2300 64
    NP75P03YDG −1.0 ~ −2.5 6.2 9.6 3200 94
    Unit V mΩ mΩ pF nC

The content in the press release, including, but not limited to, product prices and specifications, is based on the information as of the date indicated on the document, but may be subject to change without prior notice.

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