Package Information
| CAD Model: | View CAD Model |
| Pkg. Type: | SOT23 |
| Pkg. Code: | PAB |
| Lead Count (#): | 3 |
| Pkg. Dimensions (mm): | 2.9 x 1.3 x 0.00 |
| Pitch (mm): |
Environmental & Export Classifications
| Moisture Sensitivity Level (MSL) | 1 |
| Pb (Lead) Free | Yes |
| RoHS (X60003CIG3Z-41T1) | Download |
| ECCN (US) | |
| HTS (US) |
Product Attributes
| Lead Count (#) | 3 |
| Carrier Type | Reel |
| Moisture Sensitivity Level (MSL) | 1 |
| Pb (Lead) Free | Yes |
| Pb Free Category | Pb-Free 100% Matte Tin Plate w/Anneal-e3 |
| Temp. Range (°C) | -40 to +85°C |
| Hysteresis (ppm) | 150 |
| IS (mA) | 0.0009 |
| ISINK (Max) (mA) | 10 |
| ISOURCE (Max) (mA) | 10 |
| Initial Accuracy (% Vout) (% Vout) | 0.06 |
| Initial Accuracy (mV (±)) (mV (±)) | 2.5 |
| LTD Stability (ppm) | 50 |
| Length (mm) | 2.9 |
| Low Frequency Noise (µVPP) | 30 |
| MOQ | 3000 |
| Output Noise (Typical) | 30 µVPP |
| Parametric Category | Voltage References |
| Pkg. Dimensions (mm) | 2.9 x 1.3 x 0.00 |
| Pkg. Type | SOT23 |
| Price (USD) | $5.41321 |
| Qualification Level | Standard |
| Supply Voltage Vs Range | 4.5 to 9.0 |
| Technology | Floating Gate Array |
| Temperature Coefficient (ppm/°C) | 20 |
| VOUT (V) | 4.096 |
| VS (Max) (V) | 9 |
| VS (Min) (V) | 4.5 |
| Width (mm) | 1.3 |
Resources for X60003C-41
Description
The X60003 FGA™ voltage references is a very high precision analog voltage reference fabricated in Intersil’s proprietary Floating Gate Analog technology, which achieves superior levels of performance when compared to conventional band gap, buried zener, or XFET™ technologies. FGA™ voltage references feature very high initial accuracy, very low temperature coefficient, excellent long term stability, low noise and excellent line and load regulation, at the lowest power consumption currently available. These voltage references enable advanced applications for precision industrial and portable systems operating at significantly higher accuracy and lower power levels than can be achieved with conventional technologies.