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Renesas Electronics Corporation - June is Pride Month, a month to raise awareness of the rights and the culture of the LGBTQ+ community

Package Information

CAD Model:View CAD Model
Pkg. Type:T-TFBGA
Pkg. Code:pkg_8330
Lead Count (#):144
Pkg. Dimensions (mm):18 x 11 x 1.17
Pitch (mm):

Environmental & Export Classifications

RoHS (UPD48288118AFF-E18-DW1-A)EnglishJapanese
Moisture Sensitivity Level (MSL)
Pb (Lead) FreeYes
ECCN (US)
HTS (US)

Product Attributes

Pkg. TypeT-TFBGA
Carrier TypeTray
ArchitectureLow Latency DRAM-II
Burst Length (Words)2
Data Width (bits)18000
Density (Kb)288000
Frequency (Max) (MHz)533
I/O Voltage (V)1.5 - 1.5
Lead CompliantYes
Lead Count (#)144
Length (mm)18
MIN Frequency (MHz)175
MOQ1
Pb (Lead) FreeYes
Pkg. Dimensions (mm)18 x 11 x 1.17
Supply Voltage (V)1.8 - 1.8
Tape & ReelNo
Thickness (mm)1.17
Width (mm)11
tRC (ns)15

Description

Support is limited to customers who have already adopted these products.

Low Latency DRAM is our newest large-density memory boasting high performance. Incorporating high-performance technology used in our synchronous SRAM and the pseudo-SRAM technology used in mobile-specified RAM, Low Latency DRAM is ideal for use in various networking applications. With a Fast random access time-and data latency lower than other DRAM products-Low Latency DRAM realizes extremely high performance compared to commodity DRAM. Those features, combined with large density and lower cost per bit compared to SRAM solutions make Low Latency DRAM an attractive choice for use in next-generation, high-performance networking products.