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Renesas Electronics Corporation
N-Channel Mos Field Effect Transistor For Switching

Package Information

CAD Model:View CAD Model
Pkg. Type:VSOF
Pkg. Code:pkg_7522
Lead Count (#):8
Pkg. Dimensions (mm):2 x 3 x 0.85
Pitch (mm):

Environmental & Export Classifications

Pb (Lead) FreeYes
Moisture Sensitivity Level (MSL)1
ECCN (US)
HTS (US)

Product Attributes

Lead Count (#)8
Carrier TypeEmbossed Tape
Pb (Lead) FreeYes
ApplicationIndustrial, Consumer Use
Channels (#)1
Ciss (Typical) (pF)1350
ID (A)-7.2
Lead CompliantYes
Length (mm)2
MOQ3000
Moisture Sensitivity Level (MSL)1
Mounting TypeSurface Mount
Nch/PchPch
Pch (W)1.1
Pkg. Dimensions (mm)2 x 3 x 0.85
Pkg. TypeVSOF
Qg typ (nC)16.3
Qualification LevelIndustrial
RDS (ON) (Max) @2.5V or 1.8V (mohm)41
RDS (ON) (Max) @4.5V (mohm)29
Tape & ReelNo
Thickness (mm)0.85
VDSS (Max) (V)-20
VGSS (V)-8
Vgs (off) (Max) (V)-1.5
Width (mm)3

Description

The UPA2210T1M is a N-Channel Mos Field Effect Transistor For Switching.