NEW
Package Information
| CAD Model: | View CAD Model |
| Pkg. Type: | PQFN56, IP |
| Pkg. Code: | |
| Lead Count (#): | |
| Pkg. Dimensions (mm): | |
| Pitch (mm): |
Environmental & Export Classifications
| HTS (US) | 8541.29.0095 |
| RoHS (TP70H135G4PJSGB-TR) | EnglishJapanese |
| Pb (Lead) Free | |
| Moisture Sensitivity Level (MSL) | |
| ECCN (US) |
Product Attributes
| Pkg. Type | PQFN56, IP |
| Carrier Type | Tape & Reel |
| Mounting Type | Surface Mount |
| Temp. Range (°C) | -55 to +150°C |
| Country of Assembly | CHINA |
| Country of Wafer Fabrication | JAPAN |
| Blocking Capability | Uni-Directional Switch |
| Ciss (Typical) (pF) | 485 |
| Coss (Typical) (pF) | 29.5 |
| FET Type | N-Channel |
| Id max @ 25°C (A) | 16 |
| Qg typ (nC) | 5.9 |
| Qoss (nC) | 29.4 |
| Qualification Level | Standard |
| RDSON (Typ) (mΩ) | 135 |
| RDSON (max) (mΩ) | 169 |
| Ron * Qoss (FOM) | 3969 |
| V(TR)DSS max (V) | 800 |
| Vds min (V) | 700 |
| Vth typ (V) | 2 |
Resources for TP70H135G4PJSGB
Description
The TP70H135G4PJSGB 700V, 135mΩ gallium nitride (GaN) FET is a normally‑off device built on Renesas' Gen IV Plus platform. It combines a state‑of‑the‑art high‑voltage GaN high electron mobility transistor (HEMT) with a low‑voltage silicon MOSFET to deliver superior performance, standard gate‑drive compatibility, ease of adoption, and high reliability.
The Gen IV Plus SuperGaN® platform uses advanced epitaxial and patented device technologies to simplify manufacturability while improving efficiency through lower gate charge, reduced output capacitance, minimized crossover loss, and lower reverse‑recovery charge.