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Package Information
| CAD Model: | View CAD Model |
| Pkg. Type: | PQFN88, PP |
| Pkg. Code: | |
| Lead Count (#): | |
| Pkg. Dimensions (mm): | |
| Pitch (mm): |
Environmental & Export Classifications
| HTS (US) | 8541.29.0095 |
| RoHS (TP70H130G4PLSG-TR) | EnglishJapanese |
| Pb (Lead) Free | |
| Moisture Sensitivity Level (MSL) | |
| ECCN (US) |
Product Attributes
| Pkg. Type | PQFN88, PP |
| Carrier Type | Tape & Reel |
| Mounting Type | Surface Mount |
| Temp. Range (°C) | -55 to +150°C |
| Country of Assembly | CHINA |
| Country of Wafer Fabrication | JAPAN |
| Blocking Capability | Uni-Directional Switch |
| Ciss (Typical) (pF) | 567 |
| Coss (Typical) (pF) | 28 |
| FET Type | N-Channel |
| Id max @ 25°C (A) | 16 |
| Qg typ (nC) | 10.7 |
| Qoss (nC) | 29.2 |
| Qualification Level | Standard |
| RDSON (Typ) (mΩ) | 130 |
| RDSON (max) (mΩ) | 163 |
| Ron * Qoss (FOM) | 3796 |
| V(TR)DSS max (V) | 800 |
| Vds min (V) | 700 |
| Vth typ (V) | 4 |
Resources for TP70H130G4PLSG
Description
The TP70H135G4PLSG 700V, 13mΩ Gallium Nitride (GaN) FET is a normally‑off device built on Renesas’ Gen IV Plus platform. It combines a state‑of‑the‑art high‑voltage GaN High Electron Mobility Transistor (HEMT) with a low‑voltage silicon MOSFET to deliver superior performance, standard gate‑drive compatibility, ease of adoption, and high reliability.
The Gen IV Plus SuperGaN® platform uses advanced epitaxial and patented device technologies to simplify manufacturability while improving efficiency through lower gate charge, reduced output capacitance, minimized crossover loss, and lower reverse‑recovery charge.