Package Information
| CAD Model: | View CAD Model |
| Pkg. Type: | PQFN56 |
| Pkg. Code: | |
| Lead Count (#): | |
| Pkg. Dimensions (mm): | 5 x 6 |
| Pitch (mm): |
Environmental & Export Classifications
| Moisture Sensitivity Level (MSL) | 3 |
| ECCN (US) | EAR99 |
| HTS (US) | 8541.29.0095 |
| Pb (Lead) Free |
Product Attributes
| Pkg. Type | PQFN56 |
| Carrier Type | Tape & Reel |
| Moisture Sensitivity Level (MSL) | 3 |
| Mounting Type | Surface Mount |
| Temp. Range (°C) | -55 to +150°C |
| Blocking Capability | Uni-Directional Switch |
| Ciss (Typical) (pF) | 818 |
| Coss (Typical) (pF) | 53 |
| FET Type | N-Channel |
| Id max @ 25°C (A) | 16 |
| Pkg. Dimensions (mm) | 5 x 6 |
| Qg typ (nC) | 4.9 |
| Qoss (nC) | 56 |
| Qrr typ (nC) | 35 |
| Qualification Level | Standard |
| RDSON (Typ) (mΩ) | 150 |
| RDSON (max) (mΩ) | 180 |
| Ron * Qoss (FOM) | 8400 |
| V(TR)DSS max (V) | 800 |
| Vds min (V) | 650 |
| Vth typ (V) | 2.4 |
| trr (Typical) (nS) | 17 |
Resources for TP65H150BG4JSG
Description
The TP65H150BG4JSG 650V 150mΩ Gallium Nitride (GaN) FET is a normally-off device built using Renesas' Gen IV platform. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.
Renesas GaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge.
The TP65H150BG4JSG is offered in an industry-standard PQFN56 with a common source package configuration.