Package Information
| CAD Model: | View CAD Model |
| Pkg. Type: | TO-247 |
| Pkg. Code: | TO-247 3L |
| Lead Count (#): | 3 |
| Pkg. Dimensions (mm): | 21,07 x 15.94 x 5.02 |
| Pitch (mm): | 5.45 |
Environmental & Export Classifications
| ECCN (US) | EAR99 |
| HTS (US) | 8541.29.0095 |
| Pb (Lead) Free | |
| Moisture Sensitivity Level (MSL) |
Product Attributes
| Pkg. Type | TO-247 |
| Carrier Type | Tape & Reel |
| Mounting Type | Surface Mount |
| Temp. Range (°C) | -55 to +150°C |
| Blocking Capability | Uni-Directional Switch |
| Ciss (Typical) (pF) | 1500 |
| Coss (Typical) (pF) | 127 |
| Country of Assembly | CHINA |
| Country of Wafer Fabrication | JAPAN |
| FET Type | N-Channel |
| Id max @ 25°C (A) | 55.7 |
| Price (USD) | $4.75724 |
| Qg typ (nC) | 24.5 |
| Qoss (nC) | 135 |
| Qualification Level | Standard |
| Quality Level | Standard |
| RDSON (Typ) (mΩ) | 30 |
| RDSON (max) (mΩ) | 41 |
| Ron * Qoss (FOM) | 4050 |
| V(TR)DSS max (V) | 800 |
| Vds min (V) | 650 |
| Vth typ (V) | 4 |
| trr (Typical) (nS) | 36 |
Resources for TP65H030G4PWS
Description
The TP65H030G4PWS, 650V, 30mΩ Gallium Nitride (GaN) FET in a TO-247 package is a normally-off device using Renesas' Gen IV plus SuperGaN® platform. It combines a high-voltage GaN High Electron Mobility Transistor (HEMT) with an optimized low voltage silicon MOSFET to offer superior performance, standard drive, ease of adoption, and enhanced reliability.