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Package Information
| CAD Model: | View CAD Model |
| Pkg. Type: | TOLT |
| Pkg. Code: | |
| Lead Count (#): | |
| Pkg. Dimensions (mm): | |
| Pitch (mm): |
Environmental & Export Classifications
| Moisture Sensitivity Level (MSL) | 3 |
| HTS (US) | 8541.29.0095 |
| RoHS (TP65B110HRU-TR) | EnglishJapanese |
| Pb (Lead) Free | |
| ECCN (US) |
Product Attributes
| Pkg. Type | TOLT |
| Carrier Type | Tape & Reel |
| Moisture Sensitivity Level (MSL) | 3 |
| Mounting Type | Surface Mount |
| Temp. Range (°C) | -55 to +150°C |
| Blocking Capability | Bidirectional Switch |
| Ciss (Typical) (pF) | 810 |
| Coss (Typical) (pF) | 63 |
| Country of Assembly | MALAYSIA |
| Country of Wafer Fabrication | JAPAN |
| FET Type | N-Channel |
| Id max @ 25°C (A) | 24 |
| Qg typ (nC) | 6.8 |
| Qoss (nC) | 62 |
| Qualification Level | Standard |
| RDSON (Typ) (mΩ) | 110 |
| RDSON (max) (mΩ) | 140 |
| RXEN Polarity | Bidirectional GaN |
| Ron * Qoss (FOM) | 6820 |
| V(TR)DSS max (V) | 800 |
| Vds min (V) | 650 |
| Vth typ (V) | 3 |
Resources for TP65B110HRU
Description
The TP65B110HRU is a 650V 110mΩ common-drain bidirectional switch (BDS) built on Renesas' SuperGaN® Gen I bidirectional platform. It conducts current and blocks voltage in both directions with the smallest footprint and a best-in-class switching figure of merit. The device combines a monolithic, bidirectional high-voltage, depletion-mode GaN with normally-off low-voltage silicon MOSFETs to provide superior performance, high threshold for standard gate-drive compatibility, easy integration, and robust reliability for advanced power applications.