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Package Information
| CAD Model: | View CAD Model |
| Pkg. Type: | LSSO5 |
| Pkg. Code: | |
| Lead Count (#): | 5 |
| Pkg. Dimensions (mm): | 2.5 x 7.5 x 2.1 |
| Pitch (mm): |
Environmental & Export Classifications
| Moisture Sensitivity Level (MSL) | 1 |
| Pb (Lead) Free | Yes |
| RoHS (RV1S9292ACCSP-10YV#SC0) | EnglishJapanese |
| ECCN (US) | |
| HTS (US) |
Product Attributes
| Moisture Sensitivity Level (MSL) | 1 |
| Pb (Lead) Free | Yes |
| Temp. Range (°C) | -40 to +125 |
| Country of Assembly | JAPAN |
| Country of Wafer Fabrication | JAPAN |
| Breakdown Voltage (BV) (kV rms) | 5 |
| CMTI min. (kV/µs) | 100 |
| Channels (#) | 1 |
| Creepage Distance (mm) | 8.2 |
| DC IFLH max. (mA) | 6 |
| IFLH (Max) (mA) | 6 |
| IOL/IOH (Peak) (A) | 4 |
| Isolation Voltage (Vrms) | 5000 |
| Lead Compliant | Yes |
| Lead Count (#) | 5 |
| Length (mm) | 2.5 |
| MOQ | 20 |
| Peak Output Current IPK (A) | 4 |
| Pkg. Dimensions (mm) | 2.5 x 7.5 x 2.1 |
| Pkg. Type | LSSO5 |
| Price (USD) | $2.79295 |
| SW PDD max. (ns) | 35 |
| SW PWD max. (ns) | 35 |
| SW tPLH, tPHL max. (ns) | 95 |
| Safety Standard CSA (CAN/CSA C22.2 62368-1) | Approved |
| Safety Standard UL (UL1577) | Approved |
| Safety Standard VDE (EN IEC 60747-5-5) | Approved |
| Supply Voltage (V) | 10 - 30 |
| Tape & Reel | No |
| Target applications | IGBT,GaN FET,SiC FET and Si power MOSFET gate drive,Industrial inverter / AC Servo,Solar and wind Power Conditioner |
| Thickness (mm) | 2.1 |
| UVLO | Yes |
| VCC-VEE (Max) (V) | 35 |
| Width (mm) | 7.5 |
| tPHL (Max) (μs) | 0.095 |
| tPLH (Max) (μs) | 0.095 |
| tf (Typical) (µs) | 0.01 |
Resources for RV1S9292A
Description
The RV1S9291A and RV1S9292A are optically coupled isolators that contain an AlGaAs LED on the input side and a photodiode with a signal‑processing circuit and power MOSFETs integrated into a single chip on the output side. These devices are designed specifically for high common‑mode transient immunity (CMTI), high‑speed switching, and high‑temperature operation up to TA = 125 °C. They are suitable for driving IGBT, GaN FET, SiC FET, and Si power MOSFET gate drives.