Package Information
| CAD Model: | View CAD Model |
| Pkg. Type: | FCLGA |
| Pkg. Code: | FL0009AB |
| Lead Count (#): | 9 |
| Pkg. Dimensions (mm): | 3.3 x 3.3 x 0.796 |
| Pitch (mm): | 0.65 |
Environmental & Export Classifications
| Moisture Sensitivity Level (MSL) | 3 |
| ECCN (US) | EAR99 |
| HTS (US) | 8541.29.0095 |
| RoHS (RTP100E1P8G1FL-DSC-TR) | EnglishJapanese |
| Pb (Lead) Free |
Product Attributes
| Pkg. Type | FCLGA |
| Carrier Type | Tape & Reel |
| Moisture Sensitivity Level (MSL) | 3 |
| Mounting Type | Surface Mount |
| Temp. Range (°C) | -40 to +150°C |
| Assembly Location | CHINA |
| Wafer Fab Location | Taiwan |
| Blocking Capability | Uni-Directional Switch |
| Ciss (Typical) (pF) | 2147 |
| Coss (Typical) (pF) | 606 |
| FET Type | E-mode GaN |
| IDS (A) @ Ta = 25°C | 29 |
| IDS (A) @ Tc = 25°C | 282 |
| Id max @ 25°C (A) | 38.7 |
| Lead Count (#) | 9 |
| Pkg. Dimensions (mm) | 3.3 x 3.3 x 0.796 |
| Price (USD) | $1.75 |
| Qg typ (nC) | 16.3 |
| Qoss (nC) | 50 |
| Qualification Level | Standard |
| Quality Level | Standard |
| RDSON (Typ) (mΩ) | 1.8 |
| RDSON (max) (mΩ) | 2.4 |
| Ron * Qoss (FOM) | 99 |
| Theta-JA (°C/W) | 47 |
| V(TR)DSS max (V) | 120 |
| Vds min (V) | 100 |
| Vth typ (V) | 1.1 |
Resources for RTP100E1P8G1FL-DSC
Description
The RTP100E1P8G1FL-DSC is a 100V, 1.8mΩ enhancement-mode (e-mode) gallium nitride (GaN) FET built on Renesas' Gen 1 REXGaN® platform and housed in a compact 3.3mm × 3.3mm dual-side-cooled (DSC) FCLGA package. Utilizing advanced packaging technology, it combines ultra-fast switching performance with enhanced thermal characteristics to enable high-efficiency, high-power-density designs. Its dual-side-cooled package and silicon-compatible footprint simplify migration from traditional silicon MOSFETs to GaN technology, helping reduce development time, improve thermal management, and lower overall power losses.