Package Information
| CAD Model: | View CAD Model |
| Pkg. Type: | TFBGA |
| Pkg. Code: | pkg_11618 |
| Lead Count (#): | 48 |
| Pkg. Dimensions (mm): | 8.5 x 7.5 x 1.2 |
| Pitch (mm): |
Environmental & Export Classifications
| Moisture Sensitivity Level (MSL) | 3 |
| ECCN (US) | 3A991.b.2.a |
| HTS (US) | 8542.32.0041 |
| RoHS (RMWV6416AGBG-5S2#KC0) | EnglishJapanese |
| Pb (Lead) Free | Yes |
Product Attributes
| Carrier Type | Embossed Tape |
| Moisture Sensitivity Level (MSL) | 3 |
| Country of Assembly | JAPAN TAIWAN |
| Country of Wafer Fabrication | JAPAN |
| Access Time (ns) | 55 |
| Density (Kb) | 64000 |
| Lead Compliant | Yes |
| Lead Count (#) | 48 |
| Length (mm) | 8 |
| Longevity | 2032 Dec |
| MOQ | 1000 |
| Memory Capacity (kbit) | 64000 |
| Memory Density | 64M |
| Organization | 4M x 16 |
| Organization (bit) | x 16 |
| Organization (kword) | 4000 |
| Pb (Lead) Free | Yes |
| Pkg. Dimensions (mm) | 8 x 8 x 1.2 |
| Pkg. Type | FBGA(48) |
| Price (USD) | $35.25264 |
| Remarks | Dual Chip Select (CS1#, CS2) |
| Replacement Remark | Generation change with die shrink from 0.15um to 0.11um process |
| Supply Voltage (V) | 2.7 - 3.6 |
| Tape & Reel | No |
| Temp. Range (°C) | -40 to +85 |
| Thickness (mm) | 1.2 |
| Width (mm) | 8 |
Resources for RMWV6416A
Description
The RMWV6416A is a 64-Mbit static RAM organized 4, 194, 304-word × 16-bit, fabricated by Renesas' high-performance Advanced LPSRAM technologies. The RMWV6416A realizes higher density, higher performance, and low-power consumption. The device offers low-power standby power dissipation. Therefore, it is suitable for battery backup systems. It is offered in a 48-pin TSOP (I), 52-pin µTSOP (II), or 48-ball fine-pitch ball grid array.