Skip to main content
8Mb Advanced LPSRAM (512k word × 16-bit)

Package Information

CAD Model: View CAD Model
Pkg. Type: TSOP(2)
Pkg. Code: pkg_11787
Lead Count (#): 44
Pkg. Dimensions (mm): 18.41 x 10.16 x 1.2
Pitch (mm): 0.8

Environmental & Export Classifications

Moisture Sensitivity Level (MSL) 3
ECCN (US) 3A991.b.2.a
HTS (US) 8542.32.0041
RoHS (RMLV0816BGSB-4S2#AA0) EnglishJapanese
Pb (Lead) Free Yes

Product Attributes

Carrier Type Tray
Moisture Sensitivity Level (MSL) 3
Country of Assembly TAIWAN
Country of Wafer Fabrication JAPAN
Access Time (ns) 45
Density (Kb) 8000
Lead Compliant Yes
Lead Count (#) 44
Length (mm) 18
Longevity 2032 Dec
MOQ 1
Memory Capacity (kbit) 8000
Memory Density 8M
Organization 512K x 16
Organization (bit) x 16
Organization (kword) 512
Pb (Lead) Free Yes
Pkg. Dimensions (mm) 18 x 10 x 1.2
Pkg. Type TSOP(44)
Price (USD) $5.24302
Remarks Single Chip Select (CS#)
Replacement Remark Change in generation from 0.15 um to 0.11 um
Supply Voltage (V) 2.4 - 3.6
Tape & Reel No
Temp. Range (°C) -40 to +85
Thickness (mm) 1.2
Width (mm) 10

Description

The RMLV0816BGSB is an 8-Mbit static RAM organized as 524, 288-word × 16-bit, fabricated by Renesas' high-performance Advanced LPSRAM technologies. The RMLV0816BGSB realizes higher density, higher performance, and low-power consumption. The device offers low-power standby power dissipation. Therefore, it is suitable for battery backup systems. It is offered in a 44-pin TSOP (II) package.