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Renesas Electronics Corporation
8Mb Advanced LPSRAM (512k word × 16-bit)

Package Information

CAD Model:View CAD Model
Pkg. Type:TSOP(44)
Pkg. Code:pkg_11787
Lead Count (#):44
Pkg. Dimensions (mm):18 x 10 x 1.2
Pitch (mm):0.8

Environmental & Export Classifications

Moisture Sensitivity Level (MSL)3
ECCN (US)3A991.b.2.a
HTS (US)8542.32.0041
RoHS (RMLV0816BGSB-4S2#AA0)EnglishJapanese
Pb (Lead) FreeYes

Product Attributes

Carrier TypeTray
Moisture Sensitivity Level (MSL)3
Country of AssemblyCHINA, MALAYSIA, TAIWAN
Country of Wafer FabricationJAPAN
Access Time (ns)45
Density (Kb)8000
Lead CompliantYes
Lead Count (#)44
Length (mm)18
Longevity2032 Dec
MOQ1
Memory Capacity (kbit)8000
Memory Density8
Organization512K x 16
Organization (bit)x 16
Organization (kword)512
Pb (Lead) FreeYes
Pkg. Dimensions (mm)18 x 10 x 1.2
Pkg. TypeTSOP(44)
Price (USD)$5.69893
RemarksSingle Chip Select (CS#)
Replacement RemarkChange in generation from 0.15 um to 0.11 um
Supply Voltage (V)2.4 - 3.6
Tape & ReelNo
Temp. Range (°C)-40 to +85
Thickness (mm)1.2
Width (mm)10

Description

The RMLV0816BGSB is an 8-Mbit static RAM organized as 524, 288-word × 16-bit, fabricated by Renesas' high-performance Advanced LPSRAM technologies. The RMLV0816BGSB realizes higher density, higher performance, and low-power consumption. The device offers low-power standby power dissipation. Therefore, it is suitable for battery backup systems. It is offered in a 44-pin TSOP (II) package.