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Renesas Electronics Corporation
8Mb Advanced LPSRAM (1024k word × 8-bit)

Package Information

CAD Model:View CAD Model
Pkg. Type:TSOP(44)
Pkg. Code:pkg_11787
Lead Count (#):44
Pkg. Dimensions (mm):18 x 10 x 1.2
Pitch (mm):0.8

Environmental & Export Classifications

Moisture Sensitivity Level (MSL)3
ECCN (US)3A991.b.2.a
HTS (US)8542.32.0041
RoHS (RMLV0808BGSB-4S2#HA0)EnglishJapanese
Pb (Lead) FreeYes

Product Attributes

Carrier TypeEmbossed Tape
Moisture Sensitivity Level (MSL)3
Country of AssemblyCHINA, MALAYSIA, TAIWAN
Country of Wafer FabricationJAPAN
Access Time (ns)45
Density (Kb)8000
Lead CompliantYes
Lead Count (#)44
Length (mm)18
Longevity2032 Dec
MOQ1000
Memory Capacity (kbit)8000
Memory Density8
Organization1M x 8
Organization (bit)x 8
Organization (kword)1000
Pb (Lead) FreeYes
Pkg. Dimensions (mm)18 x 10 x 1.2
Pkg. TypeTSOP(44)
Price (USD)$5.57106
RemarksDual Chip Select (CS1#, CS2)
Replacement RemarkChange in generation from 0.15 um to 0.11 um
Supply Voltage (V)2.4 - 3.6
Tape & ReelNo
Temp. Range (°C)-40 to +85
Thickness (mm)1.2
Width (mm)10

Description

The RMLV0808BGSB  is an 8-Mbit static RAM organized as 1, 048, 576-word × 8-bit, fabricated by Renesas' high-performance Advanced LPSRAM technologies. The RMLV0808BGSB realizes higher density, higher performance, and low-power consumption. The device offers low-power standby power dissipation. Therefore, it is suitable for battery backup systems. It is offered in a 44-pin TSOP (II) package.