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Renesas Electronics Corporation
4Mb Advanced LPSRAM (256-kword × 16-bit)

Package Information

CAD Model:View CAD Model
Pkg. Type:FBGA(48)
Pkg. Code:pkg_11618
Lead Count (#):48
Pkg. Dimensions (mm):8 x 8 x 1.2
Pitch (mm):

Environmental & Export Classifications

Moisture Sensitivity Level (MSL)3
ECCN (US)3A991.b.2.a
HTS (US)8542.32.0041
RoHS (RMLV0416EGBG-4S2#KC0)EnglishJapanese
Pb (Lead) FreeYes

Product Attributes

Carrier TypeEmbossed Tape
Moisture Sensitivity Level (MSL)3
Country of AssemblyCHINA, JAPAN, TAIWAN
Country of Wafer FabricationJAPAN
Access Time (ns)45
Density (Kb)4000
Lead CompliantYes
Lead Count (#)48
Length (mm)8
Longevity2032 Dec
MOQ1000
Memory Capacity (kbit)4000
Memory Density4
Organization256K x 16
Organization (bit)x 16
Organization (kword)256
Pb (Lead) FreeYes
Pkg. Dimensions (mm)8 x 8 x 1.2
Pkg. TypeFBGA(48)
Price (USD)$3.77786
RemarksDual Chip Select (CS1#, CS2)
Replacement RemarkBack-end site change etc
Supply Voltage (V)2.7 - 3.6
Tape & ReelNo
Temp. Range (°C)-40 to +85
Thickness (mm)1.2
Width (mm)8

Description

The RMLV0416E is a 4-Mbit static RAM organized as 262, 144-word × 16-bit, fabricated by Renesas' high-performance Advanced LPSRAM technologies. The RMLV0416E realizes higher density, higher performance, and low-power consumption. The RMLV0416E device offers low-power standby power dissipation. Therefore, it is suitable for battery backup systems. It is offered in a 44-pin TSOP (II) or 48-ball fine-pitch ball grid array.