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IGBT 650V 20A TO-3PFM

Package Information

CAD Model: View CAD Model
Pkg. Type: TO-3PFM
Pkg. Code: pkg_1307
Lead Count (#): 3
Pkg. Dimensions (mm):
Pitch (mm):

Environmental & Export Classifications

Moisture Sensitivity Level (MSL) 1
Pb (Lead) Free Yes
RoHS (RJP65T43DPM-00#T1) EnglishJapanese
ECCN (US)
HTS (US)

Product Attributes

Pkg. Type TO-3PFM
Lead Count (#) 3
Carrier Type Tube
Moisture Sensitivity Level (MSL) 1
Pb (Lead) Free Yes
Application PFC
Channels (#) 1
IC @100 °C (A) 20
IC @25 °C (A) 40
Ic (Peak) (A) 150
Lead Compliant Yes
MOQ 1
Mounting Type Through Hole
Nch/Pch Nch
Pc (W) 68.8
Pch (W) 68.8
Qualification Level Industrial
Series Name 65T4x Series
Simulation Model Available Yes
Tape & Reel No
VCE (sat) (V) 1.8
VCES (V) 650
VDSS (Max) (V) 650
tf (Typical) (µs) 0.045

Description

The RJP65T43DPM 650V, 20A trench insulated-gate bipolar transistor (IGBT) features a 150A collector peak current, offers through hole mounting, and comes in a TO-3PFM package.