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Renesas Electronics Corporation
IGBT 650V 50A TO-247A Built-In FRD

Package Information

CAD Model:View CAD Model
Pkg. Type:TO-247A
Pkg. Code:pkg_8818
Lead Count (#):3
Pkg. Dimensions (mm):
Pitch (mm):

Environmental & Export Classifications

Moisture Sensitivity Level (MSL)1
Pb (Lead) FreeYes
RoHS (RJH65T14DPQ-A0#T0)EnglishJapanese
ECCN (US)
HTS (US)

Product Attributes

Pkg. TypeTO-247A
Lead Count (#)3
Carrier TypeTube
Moisture Sensitivity Level (MSL)1
Pb (Lead) FreeYes
ApplicationIH Cooker
Channels (#)1
ConfigurationBuilt-In FRD
FRD Vf (V)1.2
FRD trr (ns)250
IC @100 °C (A)50
IC @25 °C (A)100
Ic (Peak) (A)180
Lead CompliantYes
MOQ1
Mounting TypeThrough Hole
Pc (W)250
Pch (W)250
Price (USD)$6.705
Qualification LevelIndustrial
Series Name65T1x Series
Simulation Model AvailableYes
Tape & ReelNo
VCE (sat) (V)1.45
VCES (V)650
VDSS (Max) (V)650
tf (Typical) (µs)0.115

Description

The RJH65T14DPQ-A0 650V, 50A trench insulated-gate bipolar transistor (IGBT) offers a low collector to emitter saturation voltage, built-in fast recovery diode (FRD), and can be used for induction heating and microwave oven applications. It is available in a TO-247A package type.